qs8m51 100v nch + pch middle power mosfet datasheet ll outline symbol tr1:nch tr2:pch tsmt8 v dss 100v -100v r ds(on) (max.) 325m 470m i d 2a 1.5a p d 1.5w ll features ll inner circuit 1) low on - resistance. 2) low voltage drive (4v drive). 3) small surface mount package (tsmt8). ll packaging specifications type packing embossed tape ll application reel size (mm) 180 switching tape width (mm) 8 basic ordering unit (pcs) 3000 taping code tr marking m51 ll absolute maximum ratings (t a = 25c) ,unless otherwise specified. parameter symbol value unit tr1:nch tr2:pch drain - source voltage v dss 100 -100 v continuous drain current i d 2 1.5 a pulsed drain current i d, pulse *1 6 6 a gate - source voltage v gss 20 20 v power dissipation total p d *2 1.5 w p d *3 0.7 element p d *2 1.25 junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient total r thja *2 - - 83.3 /w element - - 100 total r thja *3 - - 178 ll electrical characteristics (t a = 25c) , uuless otherwise specified parameter symbol type conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss tr1 v gs = 0v, i d = 1ma 100 - - v tr2 v gs = 0v, i d = -1ma -100 - - breakdown voltage temperature coefficient v (br)dss tr1 i d = 1ma, referenced to 25 - 116.9 - mv/ t j tr2 i d = -1ma, referenced to 25 - -91.3 - zero gate voltage drain current i dss tr1 v ds = 100v, v gs = 0v - - 1 a tr2 v ds = -100v, v gs = 0v - - -1 gate - source leakage current i gss tr1 v ds = 0v, v gs = 20v - - 10 a tr2 v ds = 0v, v gs = 20v - - 10 gate threshold voltage v gs(th) tr1 v ds = 10v, i d = 1ma 1.0 - 2.5 v tr2 v ds = -10v, i d = -1ma -1.0 - -2.5 gate threshold voltage temperature coefficient v gs(th) tr1 i d = 1ma, referenced to 25 - -3.6 - mv/ t j tr2 i d = -1ma, referenced to 25 - 3.0 - static drain - source on - state resistance r ds(on) *3 tr1 v gs = 10v, i d = 2a - 240 325 m v gs = 4.5v, i d = 2a - 250 340 v gs = 4.0v, i d = 2a - 260 355 tr2 v gs = -10v, i d = -1.5a - 350 470 v gs = -4.5v, i d = -0.75a - 380 510 v gs = -4.0v, i d = -0.75a - 400 540 forward transfer admittance |y fs | *3 tr1 v ds = 10v, i d = 2a 1.9 - - s tr2 v ds = -10v, i d = -1.5a 1.5 - - *1 pw Q 10s, duty cycle Q 1% *2 mounted on a ceramic boad (30300.8mm) *3mounted on a fr4 (12200.8mm) *4 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 290 - pf output capacitance c oss v ds = 25v - 30 - reverse transfer capacitance c rss f = 1mhz - 20 - turn - on delay time t d(on) *3 v dd ? 50v, v gs = 10v - 10 - ns rise time t r *3 i d = 1a - 10 - turn - off delay time t d(off) *3 r l = 50 - 30 - fall time t f *3 r g = 10 - 15 - parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 950 - pf output capacitance c oss v ds = -25v - 45 - reverse transfer capacitance c rss f = 1mhz - 20 - turn - on delay time t d(on) *3 v dd ? -50v, v gs = -10v - 10 - ns rise time t r *3 i d = -0.75a - 15 - turn - off delay time t d(off) *3 r l = 66 - 60 - fall time t f *3 r g = 10 - 10 - www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *3 v dd ? 50v, i d = 2a v gs = 5v - 4.7 - nc gate - source charge q gs *3 - 1.2 - gate - drain charge q gd *3 - 1.8 - parameter symbol conditions values unit min. typ. max. total gate charge q g *3 v dd ? -50v, i d = -1.5a v gs = -5v - 17.0 - nc gate - source charge q gs *3 - 4.5 - gate - drain charge q gd *3 - 5.0 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - 1.0 a body diode pulse current i sp *1 - - 6 forward voltage v sd *3 v gs = 0v, i s = 2a - - 1.2 v parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - -1.0 a body diode pulse current i sp *1 - - -6 forward voltage v sd *3 v gs = 0v, i s = -0.75a - - -1.2 v www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature fig.8 typical transfer characteristics www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig. 9 gate threshold voltage vs. junction temperature fig.10 forward transfer admittance vs. drain current fig.11 drain current derating curve fig.12 static dr ain - source on - state resistance vs. gate source voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig.1 3 static drain - source on - state resistance vs. junction temperature fig.14 static drain - source on - state resistance vs. drain current (i) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig.1 5 static drain - source on - state resistance vs. drain current (ii) fig.16 static drain - source on - state resistance vs. drain current (ili) fig.17 static drain - source on - state resistance vs. drain current (iv) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig.1 8 typical capacitance vs. drain - source voltage fig.19 switching characteristics fig.20 dynamic input characteristics fig.21 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature fig.8 typical transfer characteristics www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 12/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig. 9 gate threshold voltage vs. junction temperature fig.10 forward transfer admittance vs. drain current fig.11 drain current derating curve fig.12 static dr ain - source on - state resistance vs. gate source voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1 3/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig.13 static drain - source on - state resistance vs. junction temperature fig.14 static drain - source on - state resistance vs. drain current (i) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 14 / 1 9 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig.1 5 static drain - source on - state resistance vs. drain current (ii) fig.16 static drain - source on - state resistance vs. drain current (ili) fig.17 static drain - source on - state resistance vs. drain current (iv) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 15 / 1 9 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll electrical characteristic curves fig.1 8 typical capacitance vs. drain - source voltage fig.19 switching characteristics fig.20 dynamic input characteristics fig.21 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1 6/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll m e a surement circuits 1-1 switching time measurement circuit 1-2 switching waveforms 2-1 gate charge measurement circuit 2-2 gate charge waveform www.rohm.com ? 2015 rohm co., ltd. all rights reser ve d. 1 7 / 19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll m easurement circuits 3-1 switching time measu rement circuit 3-2 switching wa vefo rms 4-1 gate charge measurement circuit 4-2 gate charge wa vefo rm www.rohm.com ? 2015 rohm co., ltd. all r ights reserved. 18/19 20150730 - rev.001 downloaded from: http:///
qs8m51 datasheet ll di mensions www .rohm. com ? 2015 rohm co., ltd. all rights reserved. 19/19 20150730 - rev.001 downloaded from: http:///
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